Electron-Beam Lithography is a special technique to produce very small structures in the nm-region. A focussed electron beam scanned the surface of the substrate, which is covered with a electron sensitive resist material (in this experiments: PMMA). The organic material is chemically altered by the electron beam and can be removed after exposure. During the exposure process, the electrons are scattered in the resist material and in the underlying substrate. This leads to exposure in unwanted regions, a phenomena known as proximity effect. In this experiment, the students will learn the handling of the electron microscope, observe the effects of backscattered electrons and will determine the characteristic constants of the proximity effect.

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